标题
GaN-based power devices: Physics, reliability, and perspectives
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 130, Issue 18, Pages 181101
出版商
AIP Publishing
发表日期
2021-11-08
DOI
10.1063/5.0061354
参考文献
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注意：仅列出部分参考文献，下载原文获取全部文献信息。- “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
- (2021) Nicolo Zagni et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates
- (2021) Alessandro Magnani et al. MICROELECTRONICS RELIABILITY
- AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
- (2021) Idriss Abid et al. Electronics
- A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
- (2021) Nicola Modolo et al. IEEE ELECTRON DEVICE LETTERS
- Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT
- (2021) A. G. Viey et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Multi-channel nanowire devices for efficient power conversion
- (2021) L. Nela et al. Nature Electronics
- Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
- (2020) Kalparupa Mukherjee et al. Applied Physics Express
- Fabrication and characterization of Vertical GaN Schottky Barrier Diodes with Boron-implanted termination
- (2020) Wei-FanWang et al. Chinese Physics B
- Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors
- (2020) Catherine Erine et al. IEEE ELECTRON DEVICE LETTERS
- Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications
- (2020) Matteo Borga et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs
- (2020) Feiyuan Yang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Vertical breakdown of GaN on Si due to V-pits
- (2020) S. Besendörfer et al. JOURNAL OF APPLIED PHYSICS
- Al-rich AlGaN based transistors
- (2020) Albert G. Baca et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
- (2020) Alaleh Tajalli et al. Micromachines
- Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements
- (2020) Arianna Nardo et al. Applied Physics Express
- A unified model for vertical doped and polarized superjunction GaN devices
- (2020) Haimeng Huang et al. APPLIED PHYSICS LETTERS
- A System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Hard Switching Application Conditions
- (2020) Alessandro Barbato et al. IET Power Electronics
- Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy
- (2020) Masahiro Horita et al. Applied Physics Express
- 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
- (2020) Ming Xiao et al. IEEE ELECTRON DEVICE LETTERS
- Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
- (2020) Nadim Chowdhury et al. IEEE ELECTRON DEVICE LETTERS
- Growth of bulk GaN crystals
- (2020) R. Kucharski et al. JOURNAL OF APPLIED PHYSICS
- Tri-gate GaN junction HEMT
- (2020) Yunwei Ma et al. APPLIED PHYSICS LETTERS
- GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation
- (2020) Carlo De Santi et al. IEEE ELECTRON DEVICE LETTERS
- Understanding the effects of off-state and hard-switching stress in GaN-based power transistors
- (2020) Nicola Modolo et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs
- (2020) Nicolò Zagni et al. Journal of Computational Electronics
- High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
- (2020) Alaleh Tajalli et al. Materials
- Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
- (2020) Kalparupa Mukherjee et al. Materials
- Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
- (2020) Soo Cheol Kang et al. Nanomaterials
- GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
- (2020) Karolina Grabianska et al. Electronics
- On impact ionization and avalanche in gallium nitride
- (2020) Dong Ji et al. APPLIED PHYSICS LETTERS
- Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator
- (2020) Maria Ruzzarin et al. APPLIED PHYSICS LETTERS
- Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
- (2020) Sang-Woo Han et al. IEEE ELECTRON DEVICE LETTERS
- Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
- (2020) Klaas Strempel et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
- (2020) Luca Nela et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal
- (2019) Luca Nela et al. IEEE ELECTRON DEVICE LETTERS
- Fully Vertical GaN-on-Si power MOSFETs
- (2019) Riyaz Mohammed Abdul Khadar et al. IEEE ELECTRON DEVICE LETTERS
- Measurement of the Variable Surface Charge Concentration in Gallium Nitride and Implications on Device Modeling and Physics
- (2019) E. Ber et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy
- (2019) Tatsuya Kogiso et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes
- (2019) B. Rackauskas et al. MICROELECTRONICS RELIABILITY
- GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
- (2019) A. Sandupatla et al. AIP Advances
- Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
- (2019) F. Masin et al. APPLIED PHYSICS LETTERS
- A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor
- (2019) Saba Rajabi et al. IEEE ELECTRON DEVICE LETTERS
- p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
- (2019) Nadim Chowdhury et al. IEEE ELECTRON DEVICE LETTERS
- Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop
- (2019) Shaowen Han et al. IEEE ELECTRON DEVICE LETTERS
- The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
- (2019) Georges Pavlidis et al. IEEE ELECTRON DEVICE LETTERS
- The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier
- (2019) Josephine Chang et al. IEEE ELECTRON DEVICE LETTERS
- Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
- (2019) Takuya Maeda et al. IEEE ELECTRON DEVICE LETTERS
- First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy
- (2019) Moonsang Lee et al. Scientific Reports
- Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
- (2019) Muhammad Fahlesa Fatahilah et al. Scientific Reports
- Performance limits of vertical GaN of conventional doped pn and natural polarization superjunction devices
- (2019) X. Zhou et al. APPLIED PHYSICS LETTERS
- Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
- (2019) Michal Bockowski APPLIED PHYSICS LETTERS
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- (2019) Dong Ji et al. APPLIED PHYSICS LETTERS
- High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
- (2019) Minghua Zhu et al. IEEE ELECTRON DEVICE LETTERS
- Impact of Fin Width on Tri-Gate GaN MOSHEMTs
- (2019) Jun Ma et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs
- (2019) Jiabei He et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization
- (2019) Matt Grupen IEEE TRANSACTIONS ON ELECTRON DEVICES
- Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
- (2019) M. Ruzzarin et al. MICROELECTRONICS RELIABILITY
- S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application
- (2019) N. Moultif et al. MICROELECTRONICS RELIABILITY
- Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
- (2019) M. Borga et al. MICROELECTRONICS RELIABILITY
- Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
- (2019) M. Rzin et al. MICROELECTRONICS RELIABILITY
- Insights into the off-state breakdown mechanisms in power GaN HEMTs
- (2019) N. Zagni et al. MICROELECTRONICS RELIABILITY
- V-shaped dislocations in a GaN epitaxial layer on GaN substrate
- (2019) Atsushi Tanaka et al. AIP Advances
- Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics
- (2019) Kai Fu et al. IEEE ELECTRON DEVICE LETTERS
- Stability and Reliability of Lateral GaN Power Field-Effect Transistors
- (2019) Jesus A. del Alamo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Gate Reliability of p-GaN HEMT With Gate Metal Retraction
- (2019) A. N. Tallarico et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Breakdown Walkout in Polarization-Doped Vertical GaN Diodes
- (2019) Elena Fabris et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
- (2019) Riad Kabouche et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
- (2019) Idriss Abid et al. Micromachines
- Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits
- (2019) Luca Nela et al. IEEE ELECTRON DEVICE LETTERS
- Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode
- (2019) Sang-Woo Han et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
- (2019) Abhinay Sandupatla et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates
- (2019) Nicolò Zagni et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
- (2018) Ezgi Dogmus et al. Applied Physics Express
- High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
- (2018) Jingshan Wang et al. APPLIED PHYSICS LETTERS
- Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
- (2018) Lina Cao et al. APPLIED PHYSICS LETTERS
- 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
- (2018) Jun Ma et al. APPLIED PHYSICS LETTERS
- Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET
- (2018) Mengyuan Hua et al. IEEE ELECTRON DEVICE LETTERS
- 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2
- (2018) Riyaz Abdul Khadar et al. IEEE ELECTRON DEVICE LETTERS
- 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
- (2018) Jiacheng Lei et al. IEEE ELECTRON DEVICE LETTERS
- 720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
- (2018) Yuhao Zhang et al. IEEE ELECTRON DEVICE LETTERS
- High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
- (2018) Shaowen Han et al. IEEE ELECTRON DEVICE LETTERS
- 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates
- (2018) Dong Ji et al. IEEE ELECTRON DEVICE LETTERS
- GaN-on-Si Quasi-Vertical Power MOSFETs
- (2018) Chao Liu et al. IEEE ELECTRON DEVICE LETTERS
- N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
- (2018) Onur S. Koksaldi et al. IEEE ELECTRON DEVICE LETTERS
- High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
- (2018) Houqiang Fu et al. IEEE ELECTRON DEVICE LETTERS
- Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes
- (2018) Chao Liu et al. IEEE ELECTRON DEVICE LETTERS
- Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs
- (2018) Ben Rackauskas et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNₓ/PECVD-SiNₓ Gate Dielectric Stack
- (2018) Jiabei He et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- 2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal
- (2018) I. Rossetto et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel
- (2018) Wenshen Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
- (2018) Luca Sayadi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications
- (2018) Carlo De Santi et al. IET Power Electronics
- 5.0 kV breakdown-voltage vertical GaN p–n junction diodes
- (2018) Hiroshi Ohta et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
- (2018) A. R. Peaker et al. JOURNAL OF APPLIED PHYSICS
- Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride
- (2018) K. Galiano et al. JOURNAL OF APPLIED PHYSICS
- The 2018 GaN power electronics roadmap
- (2018) H Amano et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Gallium nitride vertical power devices on foreign substrates: a review and outlook
- (2018) Yuhao Zhang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Deep-level defects in homoepitaxial p-type GaN
- (2018) Yoshitaka Nakano JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Evolution of on-resistance (R ON ) and threshold voltage (V TH ) in GaN HEMTs during switch-mode operation
- (2018) Alessandro Chini et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Review of technology for normally-off HEMTs with p-GaN gate
- (2018) Giuseppe Greco et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
- (2018) Matteo Meneghini et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- On the origin of dynamic R on in commercial GaN-on-Si HEMTs
- (2018) Serge Karboyan et al. MICROELECTRONICS RELIABILITY
- High Voltage Vertical GaN p-n Diodes by Epitaxial Lift-Off from Bulk GaN Substrates
- (2018) Jingshan Wang et al. IEEE ELECTRON DEVICE LETTERS
- Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET
- (2018) Mengyuan Hua et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- “Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model
- (2018) Manikant Singh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy
- (2018) Kentaro Nagamatsu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Degradation of GaN-on-GaN vertical diodes submitted to high current stress
- (2018) E. Fabris et al. MICROELECTRONICS RELIABILITY
- Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
- (2018) M. Ruzzarin et al. MICROELECTRONICS RELIABILITY
- On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
- (2018) M. Rzin et al. MICROELECTRONICS RELIABILITY
- Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation
- (2018) Chia-Hsun Wu et al. IEEE Journal of the Electron Devices Society
- Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition
- (2018) Kai Fu et al. APPLIED PHYSICS LETTERS
- Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
- (2018) Jun Ma et al. APPLIED PHYSICS LETTERS
- Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN
- (2018) Christian Koller et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs
- (2018) Hassan Hirshy et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs
- (2018) Vipin Joshi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors
- (2018) A. Stockman et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE
- (2018) JOURNAL OF APPLIED PHYSICS
- Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers
- (2018) Yuefei Cai et al. Materials
- Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
- (2018) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
- Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode
- (2018) Shaowen Han et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
- (2017) Matteo Meneghini et al. Energies
- 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
- (2017) Zongyang Hu et al. IEEE ELECTRON DEVICE LETTERS
- Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
- (2017) Andrea Natale Tallarico et al. IEEE ELECTRON DEVICE LETTERS
- Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
- (2017) Gaofei Tang et al. IEEE ELECTRON DEVICE LETTERS
- Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes
- (2017) Houqiang Fu et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Yuhao Zhang et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Chirag Gupta et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Yuhao Zhang et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Joel Wong et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Min Sun et al. IEEE ELECTRON DEVICE LETTERS
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- (2017) Eyal Aklimi et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation
- (2017) I. Rossetto et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors
- (2017) M. Ruzzarin et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2017) Alex Guo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
- (2017) Michael J. Uren et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2017) Matteo Borga et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2017) I. Rossetto et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes
- (2017) Wenshen Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
- (2017) Dong Ji et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- GaN-on-Si Power Technology: Devices and Applications
- (2017) Kevin J. Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Superjunction Power Devices, History, Development, and Future Prospects
- (2017) Florin Udrea et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2017) Xu She et al. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies
- (2017) Masahiko Matsubara et al. JOURNAL OF APPLIED PHYSICS
- Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
- (2017) I. Rossetto et al. MICROELECTRONICS RELIABILITY
- Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length
- (2017) Cheng-Yen Chien et al. Nanoscale Research Letters
- Ohmic contacts to Al-rich AlGaN heterostructures
- (2017) E. A. Douglas et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Low cost high voltage GaN polarization superjunction field effect transistors
- (2017) H. Kawai et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation
- (2017) Ievgen Boturchuk et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length
- (2017) Cheng-Yen Chien et al. Nanoscale Research Letters
- Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
- (2017) J. Y. Tsao et al. Advanced Electronic Materials
- Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels
- (2016) Chirag Gupta et al. Applied Physics Express
- Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition
- (2016) Suguru Mase et al. Applied Physics Express
- AlGaN channel field effect transistors with graded heterostructure ohmic contacts
- (2016) Sanyam Bajaj et al. APPLIED PHYSICS LETTERS
- On reduction of current leakage in GaN by carbon-doping
- (2016) Aqdas Fariza et al. APPLIED PHYSICS LETTERS
- High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
- (2016) Y. Cao et al. APPLIED PHYSICS LETTERS
- Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier
- (2016) Y. Cao et al. APPLIED PHYSICS LETTERS
- Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
- (2016) M. Tapajna et al. IEEE ELECTRON DEVICE LETTERS
- Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes
- (2016) Carlo De Santi et al. IEEE ELECTRON DEVICE LETTERS
- Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs
- (2016) Matteo Meneghini et al. IEEE ELECTRON DEVICE LETTERS
- Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
- (2016) Xinbo Zou et al. IEEE ELECTRON DEVICE LETTERS
- OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
- (2016) Chirag Gupta et al. IEEE ELECTRON DEVICE LETTERS
- Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
- (2016) Tian-Li Wu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers
- (2016) Alessandro Chini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology
- (2016) Wu Shaobing et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Vertical GaN Power Diodes With a Bilayer Edge Termination
- (2016) Jeramy R. Dickerson et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
- (2016) Isabella Rossetto et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
- (2016) Olle Axelsson et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the origin of interface states at oxide/III-nitride heterojunction interfaces
- (2016) M. Matys et al. JOURNAL OF APPLIED PHYSICS
- Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
- (2016) Isabella Rossetto et al. MICROELECTRONICS RELIABILITY
- Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure
- (2016) M. Meneghini et al. MICROELECTRONICS RELIABILITY
- Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence
- (2016) M. Julkarnain et al. OPTICAL MATERIALS
- Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors
- (2016) Nicolas Herbecq et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy
- (2016) X. S. Nguyen et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures
- (2016) Makoto Miyoshi et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Reliability and parasitic issues in GaN-based power HEMTs: a review
- (2016) G Meneghesso et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Vertical GaN Junction Barrier Schottky Diodes
- (2016) Andrew D. Koehler et al. ECS Journal of Solid State Science and Technology
- Gate Stability of GaN-Based HEMTs with P-Type Gate
- (2016) Matteo Meneghini et al. Electronics
- 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
- (2015) Tohru Oka et al. Applied Physics Express
- 50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V
- (2015) Nariaki Tanaka et al. Applied Physics Express
- Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
- (2015) Z. Zhang et al. APPLIED PHYSICS LETTERS
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- (2015) Zongyang Hu et al. APPLIED PHYSICS LETTERS
- Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
- (2015) M. Ťapajna et al. APPLIED PHYSICS LETTERS
- Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
- (2015) Ramya Yeluri et al. APPLIED PHYSICS LETTERS
- Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
- (2015) Martin Huber et al. APPLIED PHYSICS LETTERS
- High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
- (2015) Meng Qi et al. APPLIED PHYSICS LETTERS
- Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
- (2015) Xiao-Guang He et al. Chinese Physics B
- Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
- (2015) Xiao-Hua Ma et al. Chinese Physics B
- GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV
- (2015) N. Herbecq et al. ELECTRONICS LETTERS
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
- (2015) Tian-Li Wu et al. IEEE ELECTRON DEVICE LETTERS
- Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design
- (2015) Davide Bisi et al. IEEE ELECTRON DEVICE LETTERS
- Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation
- (2015) Zhili Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
- (2015) Hiroshi Ohta et al. IEEE ELECTRON DEVICE LETTERS
- Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs
- (2015) Isabella Rossetto et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress
- (2015) Matteo Meneghini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
- (2015) Yuhao Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Vertical Power p-n Diodes Based on Bulk GaN
- (2015) Isik C. Kizilyalli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Temperature-Dependent Dynamic $R_{\mathrm {\mathrm\scriptstyle ON$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage
- (2015) Matteo Meneghini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes
- (2015) M. P. King et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress
- (2015) Fei Sang et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Band gap bowing parameter in pseudomorphic AlxGa1−xN/GaN high electron mobility transistor structures
- (2015) Anshu Goyal et al. JOURNAL OF APPLIED PHYSICS
- Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states
- (2015) M. Capriotti et al. JOURNAL OF APPLIED PHYSICS
- Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs
- (2015) Kyu Jun Cho et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Deep traps in GaN-based structures as affecting the performance of GaN devices
- (2015) Alexander Y. Polyakov et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Reliability studies of vertical GaN devices based on bulk GaN substrates
- (2015) Isik C. Kizilyalli et al. MICROELECTRONICS RELIABILITY
- Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
- (2015) I. Rossetto et al. MICROELECTRONICS RELIABILITY
- Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
- (2015) Davide Bisi et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors
- (2015) Anupama Yadav et al. Radiation Effects and Defects in Solids
- Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
- (2015) Marko J. Tadjer et al. ECS Journal of Solid State Science and Technology
- Review—Ionizing Radiation Damage Effects on GaN Devices
- (2015) S. J. Pearton et al. ECS Journal of Solid State Science and Technology
- Ohmic Contacts on p-GaN
- (2015) Jingli Chen et al. Advanced Electronic Materials
- Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation
- (2015) Sofiane Belahsene et al. Electronics
- Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
- (2014) Tohru Oka et al. Applied Physics Express
- Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
- (2014) M. Montes Bajo et al. APPLIED PHYSICS LETTERS
- Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier
- (2014) Xiao-Hua Ma et al. Chinese Physics B
- 400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V
- (2014) Isik C. Kizilyalli et al. IEEE ELECTRON DEVICE LETTERS
- High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT
- (2014) Zhe Xu et al. IEEE ELECTRON DEVICE LETTERS
- 3.7 kV Vertical GaN PN Diodes
- (2014) Isik C. Kizilyalli et al. IEEE ELECTRON DEVICE LETTERS
- GaN-on-Si Vertical Schottky and p-n Diodes
- (2014) IEEE ELECTRON DEVICE LETTERS
- Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement
- (2014) Maojun Wang et al. IEEE ELECTRON DEVICE LETTERS
- Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
- (2014) Giovanni Verzellesi et al. IEEE ELECTRON DEVICE LETTERS
- Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
- (2014) Davide Bisi et al. IEEE ELECTRON DEVICE LETTERS
- Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths
- (2014) Michael J. Uren et al. IEEE ELECTRON DEVICE LETTERS
- 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
- (2014) Hui Nie et al. IEEE ELECTRON DEVICE LETTERS
- Slant Field Plate Model for Field-Effect Transistors
- (2014) Robert Coffie IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer
- (2014) Xinhua Wang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs
- (2014) Feng Gao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analytical Field Plate Model for Field Effect Transistors
- (2014) Robert Coffie IEEE TRANSACTIONS ON ELECTRON DEVICES
- Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
- (2014) Matteo Meneghini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
- (2014) Gaudenzio Meneghesso et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
- (2014) B. Bakeroot et al. JOURNAL OF APPLIED PHYSICS
- Traps localization and analysis in GaN HEMTs
- (2014) A. Chini et al. MICROELECTRONICS RELIABILITY
- Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
- (2014) J. L. Lyons et al. PHYSICAL REVIEW B
- Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
- (2014) Stacia Keller et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
- (2014) Dennis Christy et al. AIP Advances
- Reliability Investigation of GaN HEMTs for MMICs Applications
- (2014) Alessandro Chini et al. Micromachines
- Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors
- (2013) M. Ťapajna et al. APPLIED PHYSICS LETTERS
- Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
- (2013) C. Schwarz et al. APPLIED PHYSICS LETTERS
- Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
- (2013) Yuhao Zhang et al. APPLIED PHYSICS LETTERS
- Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
- (2013) D. W. Cardwell et al. APPLIED PHYSICS LETTERS
- Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
- (2013) Marco Silvestri et al. APPLIED PHYSICS LETTERS
- Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
- (2013) Injun Hwang et al. IEEE ELECTRON DEVICE LETTERS
- Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs
- (2013) Peter Lagger et al. IEEE ELECTRON DEVICE LETTERS
- Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs
- (2013) Séraphin Dieudonné Nsele et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulation
- (2013) Matthias Auf der Maur et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
- (2013) Davide Bisi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy
- (2013) Alessandro Chini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs
- (2013) Shinya Takashima et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors
- (2013) Janesh K. Kaushik et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT
- (2013) Zhongda Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
- (2013) Marleen Van Hove et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure
- (2013) Elison Matioli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors
- (2013) Donghyun Jin et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure
- (2013) Ki-Sik Im et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High Voltage Vertical GaN p-n Diodes With Avalanche Capability
- (2013) Isik C. Kizilyalli et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
- (2013) Jin Chen et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Evaluation and Application of 600 V GaN HEMT in Cascode Structure
- (2013) Xiucheng Huang et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT
- (2013) Zhengyang Liu et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
- (2013) Xiucheng Huang et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications
- (2013) Matteo Meneghini et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Iron Coating and Annealing Processes
- (2013) Pin-Chang Huang et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies
- (2013) Unhi Honda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p–n Junction Epitaxial Layers
- (2013) Kazuhiro Mochizuki et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process
- (2013) Yoshitomo Hatakeyama et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors
- (2013) Kenichiro Tanaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures
- (2013) Sung-Bum Bae et al. MICROELECTRONIC ENGINEERING
- N-polar GaN epitaxy and high electron mobility transistors
- (2013) Man Hoi Wong et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Gallium nitride devices for power electronic applications
- (2013) B Jayant Baliga SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
- (2013) Gaudenzio Meneghesso et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport
- (2013) Guillermo Santana et al. Materials
- Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition
- (2012) T. A. Henry et al. APPLIED PHYSICS LETTERS
- Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy
- (2012) Z. Zhang et al. APPLIED PHYSICS LETTERS
- Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
- (2012) Z. Zhang et al. APPLIED PHYSICS LETTERS
- Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons
- (2012) Matteo Meneghini et al. APPLIED PHYSICS LETTERS
- Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
- (2012) Matteo Meneghini et al. IEEE ELECTRON DEVICE LETTERS
- Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
- (2012) Pil Sung Park et al. IEEE ELECTRON DEVICE LETTERS
- Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
- (2012) Chunhua Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs
- (2012) A. Sasikumar et al. IEEE ELECTRON DEVICE LETTERS
- CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
- (2012) Marleen Van Hove et al. IEEE ELECTRON DEVICE LETTERS
- Tri-Gate Normally-Off GaN Power MISFET
- (2012) Bin Lu et al. IEEE ELECTRON DEVICE LETTERS
- Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes
- (2012) Kenji Orita et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- HBM ESD Robustness of GaN-on-Si Schottky Diodes
- (2012) Shih-Hung Chen et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
- (2012) Michael J. Uren et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors
- (2012) B. D. Weaver et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN
- (2012) Shang Chen et al. JOURNAL OF APPLIED PHYSICS
- Band offset measurements of the GaN/dielectric interfaces
- (2012) Mary R. Coan et al. JOURNAL OF APPLIED PHYSICS
- Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
- (2012) Mahesh Kumar et al. MATERIALS RESEARCH BULLETIN
- Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs
- (2012) Donghyun Jin et al. MICROELECTRONICS RELIABILITY
- Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes
- (2012) A. Armstrong et al. OPTICS EXPRESS
- Unintentional doping in GaN
- (2012) Tongtong Zhu et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices
- (2012) Sourabh Khandelwal et al. SOLID-STATE ELECTRONICS
- Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure
- (2012) Atanu Das et al. AIP Advances
- Radiation effects in GaN materials and devices
- (2012) Alexander Y. Polyakov et al. Journal of Materials Chemistry C
- Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
- (2011) Farid Medjdoub et al. Applied Physics Express
- Top-down fabrication of AlGaN/GaN nanoribbons
- (2011) M. Azize et al. APPLIED PHYSICS LETTERS
- Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation
- (2011) Z. H. Liu et al. APPLIED PHYSICS LETTERS
- Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors
- (2011) Feng Gao et al. APPLIED PHYSICS LETTERS
- Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping
- (2011) Maojun Wang et al. IEEE ELECTRON DEVICE LETTERS
- Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
- (2011) Yoshitomo Hatakeyama et al. IEEE ELECTRON DEVICE LETTERS
- GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
- (2011) Akira Nakajima et al. IEEE ELECTRON DEVICE LETTERS
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
- (2011) Rongming Chu et al. IEEE ELECTRON DEVICE LETTERS
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
- (2011) Srabanti Chowdhury et al. IEEE ELECTRON DEVICE LETTERS
- Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
- (2011) Chih-Yang Chang et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack
- (2011) Norimasa Yafune et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Comparison of as-grown and annealed GaN/InGaN : Mg samples
- (2011) Qingwen Deng et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Over 1.0 kV GaN p-n junction diodes on free-standing GaN substrates
- (2011) Kazuki Nomoto et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
- (2011) Giuseppe Greco et al. Nanoscale Research Letters
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- (2010) Yu Saitoh et al. Applied Physics Express
- Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy
- (2010) A. R. Arehart et al. APPLIED PHYSICS LETTERS
- Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
- (2010) Prashanth Makaram et al. APPLIED PHYSICS LETTERS
- Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect
- (2010) Young S. Park et al. APPLIED PHYSICS LETTERS
- Carbon impurities and the yellow luminescence in GaN
- (2010) J. L. Lyons et al. APPLIED PHYSICS LETTERS
- Silicon Substrate Removal of GaN DHFETs for Enhanced (
- (2010) Puneet Srivastava et al. IEEE ELECTRON DEVICE LETTERS
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
- (2010) Milan Ťapajna et al. IEEE ELECTRON DEVICE LETTERS
- Testing the Temperature Limits of GaN-Based HEMT Devices
- (2010) David Maier et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
- (2010) Eldad Bahat-Treidel et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
- (2010) Jungwoo Joh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
- (2010) G. Koblmüller et al. JOURNAL OF APPLIED PHYSICS
- Distribution of donor states on etched surface of AlGaN/GaN heterostructures
- (2010) Masataka Higashiwaki et al. JOURNAL OF APPLIED PHYSICS
- MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
- (2010) Yu Cao et al. JOURNAL OF CRYSTAL GROWTH
- Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
- (2010) Luke Gordon et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations
- (2010) M. Faqir et al. MICROELECTRONICS RELIABILITY
- Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
- (2010) Kevin J. Chen et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Elastic strain relaxation in GaN/AlN nanowire superlattice
- (2010) O. Landré et al. PHYSICAL REVIEW B
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
- (2009) M. L. Nakarmi et al. APPLIED PHYSICS LETTERS
- Anomalous Kink Effect in GaN High Electron Mobility Transistors
- (2009) G. Meneghesso et al. IEEE ELECTRON DEVICE LETTERS
- Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
- (2009) Kota Ohi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface
- (2009) B. L. Swenson et al. JOURNAL OF APPLIED PHYSICS
- Deep defects in GaN/AlGaN/SiC heterostructures
- (2009) D. Kindl et al. JOURNAL OF APPLIED PHYSICS
- Bulk ammonothermal GaN
- (2009) R. Dwiliński et al. JOURNAL OF CRYSTAL GROWTH
- Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire
- (2009) A.Y. Polyakov et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- GaN HEMT reliability
- (2009) J.A. del Alamo et al. MICROELECTRONICS RELIABILITY
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- (2008) Hirotaka Otake et al. Applied Physics Express
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
- (2008) Takahiro Tamura et al. Applied Physics Express
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- (2008) Masahito Kodama et al. Applied Physics Express
- AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
- (2008) Tohru Oka et al. IEEE ELECTRON DEVICE LETTERS
- Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor
- (2008) Hidetoshi Ishida et al. IEEE ELECTRON DEVICE LETTERS
- Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
- (2008) Jungwoo Joh et al. IEEE ELECTRON DEVICE LETTERS
- Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer
- (2008) Srabanti Chowdhury et al. IEEE ELECTRON DEVICE LETTERS
- Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors
- (2008) M. Faqir et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
- (2008) Gaudenzio Meneghesso et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
- (2008) Marcin Miczek et al. JOURNAL OF APPLIED PHYSICS
- Excellent crystallinity of truly bulk ammonothermal GaN
- (2008) R. Dwiliński et al. JOURNAL OF CRYSTAL GROWTH
- Deep level characteristics in n-GaN with inductively coupled plasma damage
- (2008) H K Cho et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
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