Tri-gate GaN junction HEMT

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

(2020) Ming Xiao et al.   APPLIED PHYSICS LETTERS

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

(2020) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

(Ultra)Wide-Bandgap Vertical Power FinFETs

(2020) Yuhao Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

(2019) Luca Nela et al.   IEEE ELECTRON DEVICE LETTERS

Leakage and breakdown mechanisms of GaN vertical power FinFETs

(2019) Ming Xiao et al.   APPLIED PHYSICS LETTERS

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

(2019) Minghua Zhu et al.   IEEE ELECTRON DEVICE LETTERS

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

(2019) Chia-Hsun Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

(2018) Tong Zhang et al.   APPLIED SURFACE SCIENCE

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

(2017) Kai Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned AlGaN/GaN FinFETs

(2017) David F. Brown et al.   IEEE ELECTRON DEVICE LETTERS

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Slanted Tri-Gates for High-Voltage GaN Power Devices

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

(2017) Xiangdong Li et al.   IEEE ELECTRON DEVICE LETTERS

NiO/GaN heterojunction diode deposited through magnetron reactive sputtering

(2016) Liuan Li et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

(2016) Erdin Ture et al.   IEEE Journal of the Electron Devices Society

AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

(2015) Young-Woo Jo et al.   IEEE ELECTRON DEVICE LETTERS

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

(2015) Dong-Hyeok Son et al.   MICROELECTRONIC ENGINEERING

Characteristics of GaN and AlGaN/GaN FinFETs

(2014) Ki-Sik Im et al.   SOLID-STATE ELECTRONICS

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

(2013) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Heterojunction-Free GaN Nanochannel FinFETs With High Performance

(2013) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

(2013) Shinya Takashima et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

(2013) Ki-Sik Im et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

(2012) Fabrizio Roccaforte et al.   APPLIED PHYSICS LETTERS

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

(2012) Shenghou Liu et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

(2012) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

(2009) Kota Ohi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS