期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 29, 期 5, 页码 2208-2219出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2013.2267804
关键词
Analytical model; cascode configuration; gallium nitride high electron mobility transistor (GaN HEMT); hard-switching; soft-switching
资金
- Power Management Consortium in the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University
This paper presents an accurate analytical model to calculate the power loss of a high voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode configuration. The proposed model considers the package and PCB parasitic inductances, the nonlinearity of the junction capacitors, and the transconductance of the cascode GaN transistor. The switching process is illustrated in detail, including the interaction of the low voltage Si MOSFET and the high voltage GaN HEMT in cascode configuration. The switching loss is obtained by solving the equivalent circuits during the switching transition. The analytical results show that the turn-on loss dominates in hard-switching conditions while the turn-off loss is negligible, due to the intrinsic current source driving mechanism. The accuracy of the proposed model is validated by numerous experimental results. The results of both the analytical model and experiments suggest that soft-switching is critical for high voltage GaN in high-frequency high-efficiency applications.
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