High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
出版年份 2016 全文链接
标题
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 6, Pages 062103
出版商
AIP Publishing
发表日期
2016-02-10
DOI
10.1063/1.4941814
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- (2015) Zongyang Hu et al. APPLIED PHYSICS LETTERS
- Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
- (2015) Ramya Yeluri et al. APPLIED PHYSICS LETTERS
- 4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents
- (2015) I. C. Kizilyalli et al. IEEE ELECTRON DEVICE LETTERS
- Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
- (2014) Michael J. Uren et al. APPLIED PHYSICS LETTERS
- 3.7 kV Vertical GaN PN Diodes
- (2014) Isik C. Kizilyalli et al. IEEE ELECTRON DEVICE LETTERS
- 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
- (2014) Hui Nie et al. IEEE ELECTRON DEVICE LETTERS
- HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
- (2014) Tomasz Sochacki et al. JOURNAL OF CRYSTAL GROWTH
- Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
- (2014) J. L. Lyons et al. PHYSICAL REVIEW B
- Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
- (2013) Yuhao Zhang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
- (2013) Y.-F. Wu et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
- (2011) Rongming Chu et al. IEEE ELECTRON DEVICE LETTERS
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- (2010) Yu Saitoh et al. Applied Physics Express
- Characterization of bulk GaN crystals grown from solution at near atmospheric pressure
- (2010) N.Y. Garces et al. JOURNAL OF CRYSTAL GROWTH
- Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
- (2009) C. L. Chao et al. APPLIED PHYSICS LETTERS
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