Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

Selective p-type doping of Si-doped GaN by Mg ion implantation and multicycle rapid thermal annealing (MRTA) is demonstrated. Samples of GaN were capped by AlN and annealed in N-2 overpressure at temperatures up to 1330 degrees C. MRTA resulted in a lower resistivity films, compared to a conventionally-annealed reference sample. Mg acceptor activation for the MRTA annealed sample was calculated using a two-layer corrected Hall method to be about 1% at room temperature. Low temperature photoluminescence revealed donor-acceptor bound electron-hole pair recombination near 3.2 eV, indicating activation of Mg upon MRTA annealing. (C) 2015 The Electrochemical Society. All rights reserved.