Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors were irradiated with Co-60 gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792240]