期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1060-1063出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2915984
关键词
AlGaN/GaN HEMTs; self-heating; transient; thermal characterization; temperature
资金
- French RENATECH network
- Agence Nationale de la Recherche (ANR)
- European Union's Horizon 2020 Research and Innovation Program (Inrel-NPower) [720527]
The breakdown voltage of GaN/Si high-electron-mobility transistors (HEMTs) for power electronics has shown to be improved by removing the silicon substrate. The drawback to this approach is the increase in the device's thermal resistance, which limits the power dissipation that the device can achieve before severe degradation. This letter shows the ability to improve the thermal dissipation of these devices by depositing copper (Cu) below aluminum nitride (AlN) filled etched backGaN-on-Si HEMTs. The device's channel temperature is measured via Raman thermometry. The device's transient thermal dynamics is investigated via transient thermoreflectance imaging, and the temperature profile across the gate metal is monitored. In addition to the device's thermal properties, a residual stress analysis of the GaN channel is performed via photoluminescence. A notable decrease in the tensile residual stress is observed with the removal of the substrate and the addition of the AlN and Cu layers. Overall, the backside copper is shown to decrease the gate temperature of the etched backed AlN filled devices while maintaining a high breakdown voltage.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据