The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE
出版年份 2018 全文链接
标题
The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 124, Issue 21, Pages 215701
出版商
AIP Publishing
发表日期
2018-12-04
DOI
10.1063/1.5057373
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
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