期刊
MICROMACHINES
卷 5, 期 3, 页码 570-582出版社
MDPI
DOI: 10.3390/mi5030570
关键词
GaN HEMT (High Electron Mobility Transistors); reliability; RF stress; degradation mechanism
类别
资金
- EDA project MANGA
- Italian MoD project GARANTE
Results obtained during the evaluation of radio frequency (RF) reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented.
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