Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

标题
Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 6, Pages 763-766
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-04-05
DOI
10.1109/led.2017.2690974

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