期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 8, 页码 2867-2872出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2329475
关键词
Electric field effects; field-effect transistors (FETs); high-voltage techniques; power semiconductor devices; semiconductor device breakdown; transistors
The simplified field plate model for field-effect transistors previously introduced is further developed to allow arbitrary transition angles between gate and field plate or adjacent field plates. The model shows that transition angles less than 30 degrees (measured from the surface) can result in significant improvements in electric field management.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据