期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 10, 期 4, 页码 427-436出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2010.2072507
关键词
GaN heterostructures; high-temperature electronics; InAlN/GaN high-electron mobility transistor (HEMT); reliability
资金
- EU
- FP 7 program MORGAN
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.
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