Novel fully vertical GaN p-n diode on Si substrate grown by metalorganic chemical vapor deposition

We report novel GaN fully vertical p-n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 10(16)cm(-3) in an n(-)-GaN drift layer. The GaN p-n diode exhibits a differential on-resistance R-on of 7.4 m Omega cm(2), a turn-on voltage of 3.4V, and a breakdown voltage V-B of 288V. The corresponding Baliga's figure of merit (FOM) V-B(2)/R-on is 11.2 MW/cm(2). A good FOM value for the GaN-on-Si vertical p-n diode is realized for a drift layer thickness of 1.5 mu m without using substrate removal technology. (C) 2016 The Japan Society of Applied Physics