期刊
IEEE ELECTRON DEVICE LETTERS
卷 37, 期 4, 页码 474-477出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2530693
关键词
Gallium nitride; MIS; HEMT; trapping; degradation
This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility transistors with partially recessed AlGaN. Based on a set of stress/recovery experiments carried out at several temperatures, we demonstrate that: 1) operation at high temperatures and negative gate bias (-10 V) may induce a significant negative threshold voltage shift, that is well correlated to a decrease in ON-resistance; 2) this process has time constants in the range between 10-100 s, and is accelerated by temperature, with activation energy equal to 0.37 eV; and 3) the shift in threshold voltage is recoverable, with logarithmic kinetics. The negative shift in threshold voltage is ascribed to the depletion of trap states located at the SiN/AlGaN interface and/or in the gate insulator.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据