AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts

Al-rich AlGaN based transistors

(2020) Albert G. Baca et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique

(2020) Zhongyang Li et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

(2020) Yachao Zhang et al.   Nanoscale Research Letters

Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules

(2020) Ciro Scognamillo et al.   MICROELECTRONICS RELIABILITY

Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1

(2020) Mikhail Gaevski et al.   Applied Physics Express

Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

(2019) Kenjiro Uesugi et al.   Applied Physics Express

Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

(2019) Towhidur Razzak et al.   APPLIED PHYSICS LETTERS

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

(2019) Riad Kabouche et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

(2019) Idriss Abid et al.   Micromachines

Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

(2019) Zhong-Xu Wang et al.   Chinese Physics B

All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors

(2019) Hao Xue et al.   SOLID-STATE ELECTRONICS

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

(2018) Sanyam Bajaj et al.   IEEE ELECTRON DEVICE LETTERS

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

(2017) Joseph J. Freedsman et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultra-Wide Bandgap Materials and Device

(2017) Travis J. Anderson et al.   ECS Journal of Solid State Science and Technology

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

An AlN/Al0.85Ga0.15N high electron mobility transistor

(2016) Albert G. Baca et al.   APPLIED PHYSICS LETTERS

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

(2016) Hideto Miyake et al.   JOURNAL OF CRYSTAL GROWTH

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

(2016) R. J. Kaplar et al.   ECS Journal of Solid State Science and Technology

1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal

(2014) Nicolas Herbecq et al.   Applied Physics Express

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

(2014) N. Yafune et al.   ELECTRONICS LETTERS

AlGaN Channel HEMT With Extremely High Breakdown Voltage

(2013) Takuma Nanjo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

(2013) A. Pérez-Tomás et al.   JOURNAL OF APPLIED PHYSICS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

(2011) Norimasa Yafune et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

(2010) Hirokuni Tokuda et al.   Applied Physics Express

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

(2010) S. Arulkumaran et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

(2010) Eldad Bahat-Treidel et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

(2008) Takuma Nanjo et al.   APPLIED PHYSICS LETTERS

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

(2008) Ajay Raman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-Thermal-Conductivity AlN Filler for Polymer/Ceramics Composites

(2008) Shoichi Kume et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Diamond as an electronic material

(2008) Chris J.H. Wort et al.   Materials Today