期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 9, 页码 1300-1303出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3009649
关键词
Stress; Degradation; Gallium nitride; Voltage measurement; Stress measurement; Resistance; Electron traps; Avalanche conduction; charge trapping; degradation; vertical diode
资金
- University of Padova through the Novel Vertical GaN-Devices for Next Generation Power Conversion (NoveGaN) Project, under the Supporting TAlent in ReSearch @ University of Padova -STARS Consolidator Grants (STARS CoG) Grant
- MIUR (Italian Minister for Education) under the initiative Departments of Excellence (Law 232/2016)
This paper shows that vertical GaN-on-GaN p-i-n diodes are able to withstand long-term operation in moderate avalanche conduction regime, thus proving the excellent stability of the gallium nitride material system. Under constant stress in stronger avalanche regime, the devices show a significant increase in the series resistance, a slight increase in forward voltage and a measurable increase in avalanche voltage. Degradation is ascribed to the generation of defects, a process which is likely occurring in the intrinsic region. The time-dependence of the performance loss is explained by considering the simultaneous presence of field-assisted trapping in the avalanche region and of charge de-trapping in the medium-field region of the devices. An interpretative model based on these assumptions is proposed to explain the full set of the experimental data.
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