Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

标题
Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 3, Pages 805-808
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-12-17
DOI
10.1109/ted.2016.2632150

向作者/读者发起求助以获取更多资源

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started