Unintentional doping in GaN

Structural, optical and electronic properties of P doped p-type ZnO thin film

(2011) S.C. Su et al.   PHYSICA B-CONDENSED MATTER

Characterization of unintentional doping in nonpolar GaN

(2010) Tongtong Zhu et al.   JOURNAL OF APPLIED PHYSICS

Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth

(2010) Tongtong Zhu et al.   JOURNAL OF APPLIED PHYSICS

The effects of annealing on non-polar (112¯0) a-plane GaN films

(2010) Rui Hao et al.   JOURNAL OF CRYSTAL GROWTH

Microstructural origins of localization in InGaN quantum wells

(2010) R A Oliver et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Dislocations and their reduction in GaN

(2010) S. E. Bennett   MATERIALS SCIENCE AND TECHNOLOGY

Imaging dislocations in gallium nitride across broad areas using atomic force microscopy

(2010) S. E. Bennett et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Reduction of threading dislocations in hydrothermally grown ZnO films by lateral epitaxial overgrowth

(2010) Y.B. Zhang et al.   THIN SOLID FILMS

Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire

(2010) R.A. Oliver   ULTRAMICROSCOPY

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN

(2009) J. Sumner et al.   JOURNAL OF APPLIED PHYSICS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy

(2008) J. J. M. Law et al.   JOURNAL OF APPLIED PHYSICS

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH

The influence of coalescence time on unintentional doping in GaN/sapphire

(2008) S. Das Bakshi et al.   JOURNAL OF CRYSTAL GROWTH

The origin and reduction of dislocations in Gallium Nitride

(2008) R. A. Oliver et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride

(2008) J. Sumner et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers

(2008) M. A. Moram et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Advances in AFM for the electrical characterization of semiconductors

(2008) Rachel A Oliver   REPORTS ON PROGRESS IN PHYSICS