期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 3, 页码 353-355出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2649599
关键词
GaN; GaN trench MOSFET; breakdown voltage; low on-resistance; trench MOSFET; vertical MOSFET
资金
- Solid State Lighting and Energy Efficiency Centre, University of California Santa Barbara
- ARPA-E SWITCHES Program
- UC Solar
In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our previous work on OG-FETs on GaN on sapphire, utilizing a low damage gate-trench etch and using bulk GaN substrates, a breakdown voltage of 990 V with an ON-resistance 2.6 m Omega . cm(2), was achieved. Without edge termination, a high breakdown field of 1.6MV/cm was achieved in these devices.
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