Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

标题
Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
作者
关键词
-
出版物
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 36, Issue 2, Pages 1269-1273
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2020-07-10
DOI
10.1109/tpel.2020.3008226

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