期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 60, 期 6, 页码 4080-4086出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2013.2281771
关键词
AlGaN/GaN; degradation; HEMT; 1/f noise; proton
资金
- Defense Threat Reduction Agency [HDTRA1-11-1-0023]
- Office of Naval Research under DRIFT MURI Grant [N-00014-08-100655]
The responses to 1.8 MeV proton irradiation of AlGaN/GaN HEMTs grown under Ga-rich and ammonia-rich conditions are investigated in this work. Changes in defect energy distributions of AlGaN/GaN HEMTs during proton irradiation are characterized via temperature-dependent low-frequency noise measurements. Density functional theory calculations show these changes are consistent with the reconfiguration and/or dehydrogenation of oxygen-related defects in Ga-rich devices.
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