This paper reports on vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-standing GaN substrate with different sizes of Schottky electrode. The fabricated SBDs with 3 x 3 mm(2) Schottky electrodes exhibited both a forward current of 50 A and a blocking voltage of 790 V. To our knowledge, the characteristics of operation with a simultaneous high forward current and high blocking voltage are reported for the first time for vertical GaN SBDs on free-standing GaN substrates. The dependence of these characteristics on the Schottky electrode size is also reported in detail. (C) 2015 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据