期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 7, 页码 991-993出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2196973
关键词
AlGaN/GaN high-electron-mobility transistor (HEMT); capacitance-voltage (C-V); N-polar GaN; negative quantum; quantum capacitance; quantum displacement
资金
- Office of Naval Research [N00014-09-1-0707]
- DATE MURI
We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction Delta d. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement Delta d of similar to-4 nm was extracted from the measurements. Further analysis using 1-D self-consistent Schrodinger-Poisson solver has been done to validate the measured data. Our simulation results, including multiple-subband occupancy, explain the increasing capacitance in the measured C-V profile in N-polar GaN-based HEMTs.
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