Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes

(2011) Liann-Be Chang et al.   Applied Physics Express

An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au structure

(2011) Liann Be Chang et al.   APPLIED PHYSICS LETTERS

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

(2011) M. R. Holzworth et al.   APPLIED PHYSICS LETTERS

Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

(2010) L. Z. Hao et al.   APPLIED PHYSICS LETTERS

Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology

(2009) Wen Hsin Chang et al.   ADVANCED MATERIALS

Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

(2009) Atanu Das et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors

(2008) S. C. Hung et al.   APPLIED PHYSICS LETTERS

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

(2008) P. Kordoš et al.   APPLIED PHYSICS LETTERS

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

(2008) Marcin Miczek et al.   JOURNAL OF APPLIED PHYSICS