期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 11, 期 1, 页码 187-193出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2010.2103314
关键词
AlGaN; degradation; GaN; high-electron mobility transistor (HEMT)
资金
- AFOSR MURI
- Arizona State University [FA8650-08-C-1395]
The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during OFF-state electrical stress was determined as a function of Ni/Au gate dimensions (0.1-0.17 mu m), drain bias voltage, and source/drain-gate contact distance. Devices with different gate lengths and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be similar to 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.
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