期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 64, 期 9, 页码 3609-3614出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2726440
关键词
GaN; high-electron-mobility transistors (HEMTs); vertical breakdown (VB); Weibull distribution
资金
- Electronic Component Systems for European Leadership Joint Undertaking through POWERBASE [662133]
- European Union's Horizon 2020 Research and Innovation Program
This paper demonstrates and investigates the time-dependent vertical breakdown of GaN-on-Si power transistors. The study is based on electrical characterization, dc stress tests and electroluminescence measurements. We demonstrate the following original results: 1) when submitted to two-terminal (drain-to-substrate) stress, the AlGaN/GaN transistors show a time-dependent degradation process, which leads to the catastrophic failure of the devices; 2) time-to-failure follows a Weibull distribution and is exponentially dependent on stress voltage; 3) the degradation mechanism is strongly field dependent and weakly thermally activated, with an activation energy of 0.25 eV; and 4) emission microscopy suggests that vertical current flows under the whole drain area, possibly through extended defects. The catastrophic failure occurs at random positions under the drain contact. The time-dependent failure is ascribed to a percolation process activated by the high-electric field that leads to the generation of localized shunt paths between drain and substrate.
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