400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm(2) with breakdown voltages exceeding 700 V and pulsed (100 mu s) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.