Vertical GaN Junction Barrier Schottky Diodes

Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

(2016) T. J. Anderson et al.   ECS Journal of Solid State Science and Technology

Characterization of a selective AlN wet etchant

(2015) Jordan D. Greenlee et al.   Applied Physics Express

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characterization of an Mg-implanted GaN p-i-n diode

(2015) Jordan D. Greenlee et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing

(2015) Jordan D. Greenlee et al.   ECS Journal of Solid State Science and Technology

Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN

(2015) Jordan D. Greenlee et al.   ECS Journal of Solid State Science and Technology

Activation of Mg implanted in GaN by multicycle rapid thermal annealing

(2014) T.J. Anderson et al.   ELECTRONICS LETTERS

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

(2011) B.N. Feigelson et al.   JOURNAL OF CRYSTAL GROWTH

Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers

(2008) Lin Zhu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES