650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

标题
650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 2, Pages 260-263
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-12-16
DOI
10.1109/led.2017.2783908

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