On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
出版年份 2014 全文链接
标题
On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 13, Pages 134506
出版商
AIP Publishing
发表日期
2014-10-08
DOI
10.1063/1.4896900
参考文献
相关参考文献
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