Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

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(2016)   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

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(2016)   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

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(2016)   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

(2014) Xing Lu et al.   APPLIED PHYSICS LETTERS

Sapphire decomposition and inversion domains in N-polar aluminum nitride

(2014) Lindsay Hussey et al.   APPLIED PHYSICS LETTERS

Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001̅) GaN by Metalorganic Chemical Vapor Deposition

(2014) Jie Song et al.   CRYSTAL GROWTH & DESIGN

Position dependent spin wave spectrum in nanostrip magnonic waveguides

(2014) Qi Wang et al.   JOURNAL OF APPLIED PHYSICS

Absolute surface energies of polar and nonpolar planes of GaN

(2014) C. E. Dreyer et al.   PHYSICAL REVIEW B

Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

(2013) Jing Lu et al.   APPLIED PHYSICS LETTERS

Polarity control and growth of lateral polarity structures in AlN

(2013) Ronny Kirste et al.   APPLIED PHYSICS LETTERS

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

(2013) Fatih Akyol et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Theoretical Investigation of the Effect of Growth Orientation on Indium Incorporation Efficiency during InGaN Thin Film Growth by Metal–Organic Vapor Phase Epitaxy

(2013) Tomoe Yayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates

(2013) Dongjin Won et al.   JOURNAL OF CRYSTAL GROWTH

High-performance N-polar GaN enhancement-mode device technology

(2013) Uttam Singisetti et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN

(2012) S. Keller et al.   APPLIED PHYSICS LETTERS

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

(2012) Uttam Singisetti et al.   APPLIED PHYSICS LETTERS

Phase and thickness dependent modulus of Ge2Sb2Te5 films down to 25 nm thickness

(2012) Yoonjin Won et al.   APPLIED PHYSICS LETTERS

Highly conductive p-type amorphous oxides from low-temperature solution processing

(2012)   APPLIED PHYSICS LETTERS

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

(2012) Daniel J. Denninghoff et al.   IEEE ELECTRON DEVICE LETTERS

“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]”

(2012) Digbijoy N. Nath et al.   JOURNAL OF APPLIED PHYSICS

Accurate measurement of the through-plane water content of proton-exchange membranes using neutron radiography

(2012) D. S. Hussey et al.   JOURNAL OF APPLIED PHYSICS

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

(2012) Shunfeng Li et al.   JOURNAL OF CRYSTAL GROWTH

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

(2011) Jai Verma et al.   APPLIED PHYSICS LETTERS

Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

(2011) S. F. Li et al.   CRYSTAL GROWTH & DESIGN

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

GaN vertical and lateral polarity heterostructures on GaN substrates

(2011) J.K. Hite et al.   JOURNAL OF CRYSTAL GROWTH

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Relation between physical parameters and thermal stability of liquid-crystal blue phase

(2010) Hui-Yu Chen et al.   APPLIED PHYSICS LETTERS

Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

(2010) S. Keller et al.   APPLIED PHYSICS LETTERS

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

N-Polar InAlN/AlN/GaN MIS-HEMTs

(2010) David F Brown et al.   IEEE ELECTRON DEVICE LETTERS

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

(2010) Seshadri Kolluri et al.   JOURNAL OF APPLIED PHYSICS

Polarity inversion of N-face GaN using an aluminum oxide interlayer

(2010) Man Hoi Wong et al.   JOURNAL OF APPLIED PHYSICS

Time-resolved study of polyimide absorption layers for blister-actuated laser-induced forward transfer

(2010) Matthew S. Brown et al.   JOURNAL OF APPLIED PHYSICS

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

(2010) W Bergbauer et al.   NANOTECHNOLOGY

GaInN-based LED structures on selectively grown semi-polar crystal facets

(2010) Ferdinand Scholz et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Influence of phase modulation on Talbot effect

(2010) Z.X. Wang et al.   PHYSICS LETTERS A

Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect

(2009) G. F. Brown et al.   APPLIED PHYSICS LETTERS

A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

(2009) G. Wang et al.   APPLIED PHYSICS LETTERS

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

(2009) David F. Brown et al.   APPLIED PHYSICS LETTERS

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

(2009) Qian Sun et al.   JOURNAL OF CRYSTAL GROWTH

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

(2009) A.Y. Polyakov et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

(2008) N. Dietz et al.   APPLIED PHYSICS LETTERS

Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

(2008) Qing-Qing Sun et al.   APPLIED PHYSICS LETTERS

n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down

(2008) M. L. Reed et al.   APPLIED PHYSICS LETTERS

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

(2008) S. Mita et al.   JOURNAL OF APPLIED PHYSICS

Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition

(2008) Abhishek Jain et al.   JOURNAL OF APPLIED PHYSICS

Angle-independent microwave absorption by ultrathin microcavity arrays

(2008) J. R. Brown et al.   JOURNAL OF APPLIED PHYSICS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Hydrogen effects in III-nitride MOVPE

(2008) E.V. Yakovlev et al.   JOURNAL OF CRYSTAL GROWTH

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH