期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 62, 期 6, 页码 2912-2918出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2015.2480071
关键词
Displacement damage; gallium nitride; power devices; power electronics; reliability; wide-bandgap
资金
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC0494AL85000]
- DOE ARPA-E SWITCHES Program
Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n(-) drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence < 10(13) cm(-2). The unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.
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