☆ 4.6 Article

Anomalous Kink Effect in GaN High Electron Mobility Transistors

IEEE ELECTRON DEVICE LETTERS (2009)

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IEEE ELECTRON DEVICE LETTERS
卷 30, 期 2, 页码 100-102

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2010067

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AlGaN/GaN; GaN; high electron mobility transistor (HEMT); kink effect

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Engineering, Electrical & Electronic

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  1. EDA
  2. Italian Ministry for University and Research

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An anomalous kink effect has been observed in the room-temperature drain current I-D versus drain voltage V-DS characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low V-DS) and subsequent release (at high V-DS) of negative charge, resulting in a shift of pinch-off voltage V-P toward more negative voltages and in a sudden increase in I-D. The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup.

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