Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel

标题
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 36, Issue 1, Pages 014002
出版商
IOP Publishing
发表日期
2020-10-30
DOI
10.1088/1361-6641/abc5ff

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