Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
出版年份 2020 全文链接
标题
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 36, Issue 1, Pages 014002
出版商
IOP Publishing
发表日期
2020-10-30
DOI
10.1088/1361-6641/abc5ff
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel
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