☆ 4.6 Article

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

MICROMACHINES (2019)

期刊

MICROMACHINES

卷 10, 期 10, 页码 -

出版社

MDPI

DOI: 10.3390/mi10100690

关键词

GaN; high-electron-mobility transistor (HEMT); ultra-wide band gap

类别

Chemistry, Analytical Nanoscience & Nanotechnology Instruments & Instrumentation Physics, Applied

资金

French RENATECH network
French National grant [ANR-17CE05-00131, ANR-11-LABX-0014]
Agence Nationale de la Recherche (ANR) [ANR-11-LABX-0014] Funding Source: Agence Nationale de la Recherche (ANR)

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摘要

In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 degrees C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications.

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