期刊
JOURNAL OF APPLIED PHYSICS
卷 128, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0009900
关键词
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资金
- TEAM TECH program of the Foundation for Polish Science
- European Union under the European Regional Development Fund [POIR.04.04.00-00-5CEB/17-00]
- Polish National Science Center [2018/29/B/ST5/00338]
Perspectives about growth of bulk gallium nitride crystals, fabricating high structural quality gallium nitride wafers and the market demand for them are presented. Three basic crystal growth technologies, halide vapor phase epitaxy, sodium flux, and ammonothermal, are described. Their advantages and disadvantages, recent development, and possibilities are discussed. The main difficulty with crystallization of thick GaN is determined. Some new solutions for bulk growth are proposed. It is shown that only crystallization on high structural quality native seeds will ensure proper progress. New ideas for fabricating gallium nitride crystals and wafers with a better control of their structural properties and point defect concentration are proposed.
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