Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length
出版年份 2017 全文链接
标题
Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length
作者
关键词
GaN, Enhancement mode, High-electron-mobility transistor (HEMT), Surface pinning effect
出版物
Nanoscale Research Letters
Volume 12, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-06-17
DOI
10.1186/s11671-017-2189-3
参考文献
相关参考文献
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