Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

标题
Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 482-484
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-02-19
DOI
10.1109/led.2011.2105460

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