Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

(2020) Matteo Meneghini et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Fully Vertical GaN-on-Si power MOSFETs

(2019) Riyaz Mohammed Abdul Khadar et al.   IEEE ELECTRON DEVICE LETTERS

820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

(2018) Riyaz Abdul Khadar et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Quasi-Vertical Power MOSFETs

(2018) Chao Liu et al.   IEEE ELECTRON DEVICE LETTERS

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

(2018) Chao Liu et al.   IEEE ELECTRON DEVICE LETTERS

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

(2018) Wenshen Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface trap characterization of Al 2 O 3 /GaN vertical-type MOS capacitors on GaN substrate with surface treatments

(2018) Bing Ren et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Materials and processing issues in vertical GaN power electronics

(2018) Jie Hu et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

(2017) Xiangdong Li et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

(2017) Min Sun et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparing electrical performance of GaN trench-gate MOSFETs witha-plane $(11\bar{2}0)$ andm-plane $(1\bar{1}00)$ sidewall channels

(2016) Chirag Gupta et al.   Applied Physics Express

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

(2016) D. Bisi et al.   APPLIED PHYSICS LETTERS

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

(2016) Shota Kaneki et al.   APPLIED PHYSICS LETTERS

GaN Technology for Power Electronic Applications: A Review

(2016) Tyler J. Flack et al.   JOURNAL OF ELECTRONIC MATERIALS

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

(2014) P. Lagger et al.   APPLIED PHYSICS LETTERS

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

(2014) Peter Lagger et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Native point defects and dangling bonds in α-Al2O3

(2013) Minseok Choi et al.   JOURNAL OF APPLIED PHYSICS

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

(2009) B. L. Swenson et al.   JOURNAL OF APPLIED PHYSICS

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

(2008) Hirotaka Otake et al.   Applied Physics Express