Article
Materials Science, Multidisciplinary
Katarzyna Gwozdz, Vladimir Kolkovsky
Summary: The electrical properties of Fe-related defects in hydrogenated n- and p-type Si doped with iron during crystal growth were investigated. Different DLTS peaks were observed and compared with previous research. Depth profiling showed that E125(FeH) only contains one H atom.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Physics, Applied
Hongyue Wang, Po-Chun (Brent) Hsu, Ming Zhao, Eddy Simoen, Stefan De Gendt, Arturo Sibaja-Hernandez, Jinyan Wang
Summary: The study investigates electrically active defects in carbon-doped GaN layers using a metal/carbon-doped GaN/Si-doped GaN MIS structure, revealing trap states associated with different carbon doping concentrations. This provides further insights into the impact of these defects on the electrical characteristics of GaN power devices.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, Xinbo Zou
Summary: ODLTS was used to investigate minority carrier traps in p-GaN gate high electron mobility transistors. Three electron traps were identified, and their thermal releasing processes were studied quantitatively. The traps were found to be located within the p-GaN layer with high activation energies.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Gleb I. Svirskiy, Alexander V. Generalov, Nikolay A. Vinogradov, Xenia O. Brykalova, Anatoly V. Vereshchagin, Oleg V. Levin, Andrey G. Lyalin, Alexei B. Preobrajenski, Alexander S. Vinogradov
Summary: Through X-ray photoemission and absorption spectroscopy combined with DFT calculations, the nature and structure of occupied and empty valence electronic states of the [Ni(Salen)] molecular complex have been studied, identifying the composition of high-lying occupied and low-lying unoccupied electronic states. The HOMO of the complex is mainly located on the phenyl rings of the salen ligand, while the states associated with the occupied Ni 3d-derived MOs are at higher binding energies, and the LUMO is located on the salen ligand and formed by the carbon atoms in phenyl groups.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Leopold Scheffler, Anders Lei, Sune Duun, Brian Julsgaard
Summary: Defect states in nitrogen-containing float-zone silicon are investigated using DLTS and MCTS in both n- and p-type materials. The study maps the defect landscape in the entire electronic bandgap and examines whether the properties of defects differ based on the semiconductor type. The E1/E2 pair and the E4/E6 pair are studied, with no evidence found for dependency of defect properties on the semiconductor type.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, Xinbo Zou
Summary: The properties of a minority carrier (hole) trap in ss-Ga2O3 have been investigated using a NiO/ss-Ga2O3 p-n heterojunction. The activation energy for emission and the hole capture cross section were determined to be 0.10 eV and 2.48 x 10(-15) cm(2), respectively. Temperature-enhanced capture and emission kinetics were observed, and it was found that the emission process of the minority carrier trap is independent of the electric field.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Physics, Applied
Manuel Fregolent, Matteo Buffolo, Carlo De Santi, Sho Hasegawa, Junta Matsumura, Hiroyuki Nishinaka, Masahiro Yoshimoto, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: This study investigates deep levels within the bandgap in un-annealed n-type GaAsBi and identifies multiple majority and minority carrier traps, with dominant electron and hole traps originating from different defects. Additionally, it is found that the incorporation of bismuth in GaAs generates only one additional electrically active defect.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Energy & Fuels
Joerg Horzel, Sebastian Mack, Ioan Voicu Vulcanean, Karin Zimmermann, Sebastian Pingel, Wolfram Kwapil, Felix Maischner, Hannes Hoeffler, Sattar Bashardoust, Dirk Wagenmann, Johannes Greulich, Johannes Seif, Anamaria Steinmetz, Jochen Rentsch
Summary: Industrial mass production of solar cells is shifting towards carrier-selective junction solar cells with passivating contacts. The use of Ga-doped p-type Cz-Si material is still a viable option and offers the advantage of lower wafer costs.
Article
Engineering, Electrical & Electronic
Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yamin Zhang, Lixing Zhou, Erming Rui, Qiang Jiao, Yu Tian
Summary: This paper investigates trapping effect in AlGaN/GaN high-electron-mobility transistors using pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). Three electron traps with different energy levels were identified, and the correlation of different techniques was demonstrated to investigate the physical origin of traps.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Xiaoyan Tang, Simon Hammersley, Vladimir Markevich, Ian Hawkins, Iain Crowe, Trevor Martin, Tony Peaker, Matthew Halsall
Summary: Comparing GaN Schottky diodes prepared by resistive thermal evaporation and plasma sputter deposition, it was found that diodes prepared by sputter deposition have significantly higher reverse leakage current and contain two defects which may affect device performance.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Physics, Condensed Matter
Shengwen Yin, Yaping Han, Tingwei Yan, Qiang Fu, Tongtong Xu, Wenzhi Wu
Summary: The femtosecond transient absorption (TA) technique was used to study the ultrafast carrier dynamics of SnSe thin film prepared by pulsed laser deposition (PLD), and X-ray diffraction (XRD) and transmittance spectrum were utilized to characterize the thin film. The research revealed that the responses of different processes were modulated by single pulse energy, carrier concentration, and temperature, as well as by the thickness of the thin films and probe wavelengths. Our findings enhance the understanding of the relaxation mechanism in SnSe thin film and provide insights into the ultrafast optical properties of this layered IV-VI chalcogenide.
PHYSICA B-CONDENSED MATTER
(2021)
Article
Optics
Baibin Wang, Feng Liang, Degang Zhao, Yuhao Ben, Jing Yang, Ping Chen, Zongshun Liu
Summary: In a studied unintentionally doped GaN sample, the yellow luminescence (YL) band and blue luminescence (BL) band exhibit a transient behavior between 10-300 K, with observed luminescence intensities changing with the exposure time, accompanied by a red-shift of YL peak at 10-140 K and for BL peak at 140 K. These behaviors are proposed to be related to the chemical transformations of YL-related C-N and CNON defects, and BL-related C-N-H-i and CNON-H-i defects during the exposure process.
Article
Optics
Sida Wei, Xiaodong Gao, Xiaodan Wang, Yangye Pan, Xionghui Zeng, Jiafan Chen, Shunan Zheng, Ke Xu
Summary: Time-resolved photoluminescence measurements were used to study the minority carrier recombination mechanism of p-GaN films grown on different GaN substrates. The slow decay lifetime of the m-plane Mg-doped GaN reached a record value of 493.7 ps. The decrease in non-radiative recombination centers resulted in a longer slow decay lifetime for the m-plane sample.
JOURNAL OF LUMINESCENCE
(2023)
Article
Nanoscience & Nanotechnology
Saman Jafari, Yan Zhu, Fiacre Rougieux, Joyce Ann T. De Guzman, Vladimir P. Markevich, Anthony R. Peaker, Ziv Hameiri
Summary: Using the photoconductance decay measurement method, this study identified the precursor of the defect responsible for light-induced degradation in boron-doped Czochralski-grown silicon wafers. The presence of a minority carrier trap in the annealed state, which disappeared after degradation, was observed. The study also concluded that the detected trap has two or more energy levels, indicating that a single-level trap model cannot explain the doping-dependent measurements.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Jizhong Li, Paul Brabant, Dan Hannan, David Lawson
Summary: Heavily Si-doped GaN epitaxial layers (n(+)GaN) were grown on semi-insulating 6H-SiC substrate using metal-organic chemical vapor deposition. Results showed that n(+)GaN grown with N-2 carrier gas had better morphological and crystalline quality than that grown with H-2. The use of N-2 as a carrier gas also reduced impurity levels in n(+)GaN compared to H-2, indicating its potential as a better carrier gas for future applications.
JOURNAL OF ELECTRONIC MATERIALS
(2023)