期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 59, 期 6, 页码 3077-3080出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2012.2224371
关键词
Displacement damage; gallium nitride; high electron mobility transistors; proton irradiation
资金
- Office of Naval Resarch
- Air Force Office of Scientific Research
We present the results of a radiation damage experiment on AlxGa1-xN/GaN high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected.
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