期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 5, 页码 667-669出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2188016
关键词
Au free; GaN on Si; gate dielectric; high voltage; metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT)
资金
- European Space Agency [20713/07/NL/SF]
We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The process starts from a 150-mm GaN-on-Si substrate with an embedded Si3N4/Al2O3 bilayer gate dielectric, encapsulated by a high-temperature low-pressure chemical vapor deposited nitride layer. Power devices with a 20-mm gate width reach a maximum output current of 8 A, a breakdown voltage of 750 V, and a specific ON-resistance R-on,(sp) of 2.9 m Omega . cm(2). The OFF-state drain leakage at 600 V is 7 mu A. We show robust gate dielectrics with a large gate bias swing.
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