期刊
APPLIED PHYSICS LETTERS
卷 96, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3453660
关键词
deep level transient spectroscopy; deep levels; energy gap; gallium compounds; III-V semiconductors; impurity states; infrared spectra; interstitials; molecular beam epitaxial growth; plasma materials processing; semiconductor growth; semiconductor thin films; ultraviolet spectra; vacancies (crystal); visible spectra; wide band gap semiconductors
资金
- Office of Naval Research [N00014-09-0242]
Deep levels in N-face and Ga-face n-type GaN grown by plasma-assisted molecular beam epitaxy were detected, analyzed and compared using deep level optical spectroscopy (DLOS) and conventional thermal deep level transient spectroscopy (DLTS), which together enable deep level detection throughout the GaN band gap. A redistribution of band gap states was observed between the two GaN crystal growth polarities but with a similar total trap density. Most significant was a tenfold concentration increase in a trap at E(C)-0.25 eV that is likely related to nitrogen vacancies for the N-face polarity material, with no significant change for the Ga-vacancy-related level at E(C)-2.60 eV. The DLOS results suggest that carbon impurities, which generate several GaN band gap states, appear to incorporate differently for both crystal polarities with the potential carbon interstitial at E(C)-1.28 eV being undetected for N-face material. Finally, low concentrations of several new levels in the N-face n-GaN not previously observed in Ga-face n-GaN were observed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3453660]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据