Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Slanted Tri-Gates for High-Voltage GaN Power Devices

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Magneto-ballistic transport in GaN nanowires

(2016) Giovanni Santoruvo et al.   APPLIED PHYSICS LETTERS

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

(2016) Jun Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

(2016) Edward A. Jones et al.   IEEE Journal of Emerging and Selected Topics in Power Electronics

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

(2015) Jin Wei et al.   IEEE ELECTRON DEVICE LETTERS

GaN-based multi-two-dimensional-electron-gas-channel diodes on sapphire substrates with breakdown voltage of over 3 kV

(2015) Akihisa Terano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

(2015) Jun Ma et al.   JOURNAL OF CRYSTAL GROWTH

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

(2015) Elison Matioli et al.   NANO LETTERS

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

(2012) Susai Lawrence Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

(2012) A. Kamath et al.   IEEE ELECTRON DEVICE LETTERS

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

(2012) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

(2012) JunShuai Xue et al.   JOURNAL OF APPLIED PHYSICS

Top-down fabrication of AlGaN/GaN nanoribbons

(2011) M. Azize et al.   APPLIED PHYSICS LETTERS

GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

(2010) T Lim et al.   IEEE ELECTRON DEVICE LETTERS

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(2010) Yu Cao et al.   JOURNAL OF CRYSTAL GROWTH

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

(2009) C. Ostermaier et al.   IEEE ELECTRON DEVICE LETTERS

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

(2008) Tom Zimmermann et al.   IEEE ELECTRON DEVICE LETTERS