High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

出版年份 2010 全文链接

标题

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

作者

关键词

-

出版物

JOURNAL OF APPLIED PHYSICS

Volume 107, Issue 4, Pages 043527

出版商

AIP Publishing

发表日期

2010-02-26

DOI

10.1063/1.3285309

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