High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

出版年份 2019 全文链接

标题

作者

关键词

出版物

Volume 40, Issue 8, Pages 1289-1292

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2019-06-13

DOI

10.1109/led.2019.2922204

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