期刊
CHINESE PHYSICS B
卷 24, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/24/6/067301
关键词
high electron mobility transistors; GaN; two-dimensional electron gas; polarization effect
资金
- National Natural Science Foundation of China [61377020, 61376089, 61223005, 61176126]
- National Science Fund for Distinguished Young Scholars, China [60925017]
Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.
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