期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 1, 页码 372-377出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2881325
关键词
Gallium nitride (GaN); high-electronmobility transistor (HEMT); proton irradiation; dynamic ON-resistance
资金
- agency Flanders Innovation and Entrepreneurship [HBC.2016.0221]
- ON Semiconductor Belgium, Oudenaarde, Belgium [HBC.2016.0221]
Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 10(13) cm(-2), the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 degrees C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.
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