GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
出版年份 2020 全文链接
标题
GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
作者
关键词
-
出版物
Electronics
Volume 9, Issue 9, Pages 1342
出版商
MDPI AG
发表日期
2020-08-19
DOI
10.3390/electronics9091342
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds
- (2019) Malgorzata Iwinska et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method
- (2019) Tadao Hashimoto et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds
- (2019) M. Amilusik et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN
- (2018) S. Schimmel et al. JOURNAL OF CRYSTAL GROWTH
- Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
- (2018) M. Zajac et al. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
- Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals
- (2018) M. Bockowski et al. JOURNAL OF CRYSTAL GROWTH
- Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN?
- (2018) S. Porowski et al. JOURNAL OF CRYSTAL GROWTH
- Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds
- (2016) Malgorzata Iwinska et al. Applied Physics Express
- High-quality, 2-inch-diameterm-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds
- (2016) Yusuke Tsukada et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
- (2016) J.Z. Domagala et al. JOURNAL OF CRYSTAL GROWTH
- Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
- (2016) E. Richter et al. JOURNAL OF CRYSTAL GROWTH
- Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds
- (2016) M Bockowski et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Progress in bulk GaN growth
- (2015) Ke Xu et al. Chinese Physics B
- The challenge of decomposition and melting of gallium nitride under high pressure and high temperature
- (2015) S. Porowski et al. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
- Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates
- (2015) L. Kirste et al. ECS Journal of Solid State Science and Technology
- Improved growth rates and purity of basic ammonothermal GaN
- (2014) S. Pimputkar et al. JOURNAL OF CRYSTAL GROWTH
- Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed
- (2014) Tomasz Sochacki et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Acidic ammonothermal growth of GaN crystals using GaN powder as a nutrient
- (2013) Quanxi Bao et al. CRYSTENGCOMM
- High Quality, Low Cost Ammonothermal Bulk GaN Substrates
- (2013) Dirk Ehrentraut et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy
- (2010) Yuichi Oshima et al. JOURNAL OF CRYSTAL GROWTH
- Bulk GaN crystals grown by HVPE
- (2009) Kenji Fujito et al. JOURNAL OF CRYSTAL GROWTH
- Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
- (2008) S. Keller et al. JOURNAL OF APPLIED PHYSICS
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