Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

出版年份 2016 全文链接

标题

作者

关键词

AlGaN/GaN HEMT, p-GaN gate, Forward gate bias overstress, Reliability, Emission microscopy, Spectral analysis

出版物

Volume 64, Issue -, Pages 547-551

出版商

Elsevier BV

发表日期

2016-09-19

DOI

10.1016/j.microrel.2016.07.127

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